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Silicon Carbide

Silicon carbide ceramics not only have excellent mechanical properties at room temperature, such as high flexural strength, excellent oxidation resistance, good corrosion resistance, high wear resistance and low friction coefficient, but also high temperature mechanical properties (strength, creep resistance) properties, etc.) is the best known ceramic materials. The high temperature strength of hot pressing sintering, pressureless sintering and hot isostatic pressing sintered materials can be maintained up to 1600 ℃, which is the material with the best high temperature strength among ceramic materials. The oxidation resistance is also the best among all non-oxide ceramics.

Silicon carbide ceramics have excellent mechanical properties, excellent oxidation resistance, high wear resistance and low friction coefficient. The disadvantage of SiC ceramics is that the fracture toughness is low, that is, the brittleness is relatively large. For this reason, multiphase ceramics based on SiC ceramics, such as fiber (or whisker) reinforcement, heterogeneous particle dispersion strengthening, and gradient functional materials have appeared one after another. , which improves the toughness and strength of the monomer material.


The initial application of SiC is that due to its superhard properties, it can be prepared into various grinding wheels, abrasive cloths, sandpapers and various abrasives, so it is widely used in the machining industry. In World War II, it was found that it can also be used as a reducing agent and heating element in steelmaking, thus promoting the rapid development of SiC. SiC ceramics have been widely used in petroleum, chemical industry, microelectronics, automobile, aerospace, aviation, papermaking, laser, mining and atomic energy and other industrial fields. Silicon carbide has been widely used in high temperature bearings, bulletproof plates, nozzles, high temperature corrosion resistant parts As well as high temperature and high frequency range of electronic equipment components and other fields.